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Hafnium Oxide Nanopowder

Hafnium Oxide Nanopowder / Nanoparticles (HfO2)

AvailableHafnium Oxide Nanopowder for SaleWholesale & RetailManufacturer & Supplier
  • Symbol: HfO2
  • Purity: 99.9%
  • Particle size: 100nm, 200nm, 500nm, 800nm, 1um, etc.
  • Shape: Spherical or irregular
  • In Stock: Available
  • Min. Order: 1 kg
  • Ships to: Worldwide
  • Hafnium Oxide Nanopowder Price & List

    Product Name Purity Average Particle Size Shape Color
    Hafnium Oxide Nanopowder ≥99.9% 100nm Spherical White
    Hafnium Oxide Nanopowder ≥99.9% 200nm Irregular White
    Hafnium Oxide Nanopowder ≥99.9% 500nm Irregular White
    Hafnium Oxide Nanopowder ≥99.9% 800nm Irregular White
    Micron Hafnium Oxide Powder ≥99.9% 1um Irregular White
    Micron Hafnium Oxide Powder ≥99.9% 5um Irregular White
    Micron Hafnium Oxide Powder ≥99.9% 8um Irregular White
    Micron Hafnium Oxide Powder ≥99.9% 12um Irregular White
    Note: We provide customized service. If you don't find the powder you want, please send us an email directly. We can customize it according to your requirements.

    Hafnium Oxide Nanopowder

    Hafnium oxide nanopowder, also known as hafnium oxide nanoparticle or nano hafnium oxide powder. It refers to the ultrafine hafnium oxide powder with the particle size of 1-100nm. According to the shape, there are spherical hafnium oxide nanoparticles and irregular hafnium oxide nanoparticles. 

    We provide nano hafnium oxide powder with particle size of 100nm, 200nm, 500nm, 800nm, and so on. In addition to hafnium oxide nanopowder, we also provide more than 1um spherical and irregular hafnium oxide powder. Like 1um, 5um, 8um, 12um, etc. micron hafnium oxide powder.

    Hafnium Oxide Nanopowder Application

    Our nano hafnium oxide powder has high purity and uniform particle size distribution, which can be used in the following occasions:
    Nano hafnium oxide powder is a kind of ceramic material with wide band gap and high dielectric constant, which can be used in the field of microelectronics. It can replace the gate insulating layer of metal oxide semiconductor field-effect transistor (MOSFET), which is the core device of silicon-based integrated circuits, to solve the size limit problem of the development of traditional silicon dioxide / silicon structure in MOSFET.

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